sep.2000 1. 2. 3. 4. 5. 6. 7. 8. 9. v v v v v v v 10. 11. 12. 13. 14. 15. 16. uu v v w w wpc upi vpi wpi nc ni pn p p n n upc f o v vpc 17. 18. 19. v v cc s i gnd gnd out upi v u fo up upc f o in v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in v v fo v v fo vpi v vp vpc wpi w wp wpc v cc s i gnd gnd out f o in v cc s i gnd gnd out f o in u n v cc s i gnd gnd out f o in v v w n v ni n nc temp f o p u v w n v cc s i gnd gnd out f o in b b r 20. 21. 22. 23. 24. 25. w v u n b r p b rn w fo v fo u fo p k s h v 0.6 0.1 x 0.4 0.1 mm pin (19 typ.) 6.0 0.1 x 0.8 0.1 mm pin (6 typ.) b e a g c d j n n n f u 10 12 pb w 34 7 5 6 8 9 11 13 15 17 19 12 14 16 18 t (15 typ.) r - dia. (4 typ.) nuv q (4 typ.) l mmmmm dimensions inches millimeters a 3.96 0.04 100.5 1.0 b 3.48 0.02 88.5 0.5 c 2.76 0.04 70.0 1.0 d 2.30 0.02 58.5 0.5 e 2.22 0.02 56.5 0.5 f 1.61 41.0 g 1.30 33.0 h 0.75 0.04 19.0 1.0 j 0.542 13.77 k 0.53 13.5 dimensions inches millimeters l 0.51 13.0 m 0.49 0.01 12.5 0.25 n 0.300 0.01 7.62 p 0.22 5.5 q 0.20 rad. rad. 5.0 r 0.18 dia. dia. 4.5 s 0.108 2.75 t 0.100 0.01 2.54 0.25 u 0.030 0.75 v 0.04 1.0 outline drawing and circuit diagram mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package description: mitsubishi intelligent power mod- ules are isolated base modules de- signed for power switching applica- tions operating at frequencies to 20khz. built-in control circuits pro- vide optimum gate drive and pro- tection for the igbt and free-wheel diode power devices. features: u complete output power circuit u gate drive circuit u protection logic C short circuit C over current C over temperature C under voltage applications: u inverters u ups u motion/servo control u power supplies ordering information: example: select the complete part number from the table below -i.e. PM50RSK060 is a 600v, 50 ampere intelligent power mod- ule. type current rating v ces amperes volts (x 10) pm 50 60
sep.2000 mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units power device junction temperature t j -20 to 150 c storage temperature t stg -40 to 125 c case operating temperature t c -20 to 100 c mounting torque, m4 mounting screws 0.98 ~ 1.47 n m module weight (typical) 110 grams supply voltage protected by oc and sc (v d = 13.5 - 16.5v, inverter part, t j = 125 c) v cc(prot.) 400 volts isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms control sector supply voltage (applied between v up1 -v upc , v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc )v d 20 volts input voltage (applied between u p -v upc , v p -v vpc , w p -v wpc , u n v n w n -v nc )v cin 20 volts fault output supply voltage (applied between u fo -v upc , v fo -v vpc , w fo -v wpc , f o -v nc ) v fo 20 volts fault output current (sink current of u fo , v fo , w fo and f o terminal) i fo 20 ma igbt inverter sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 600 volts collector current, i c 50 amperes peak collector current, i cp 100 amperes supply voltage (applied between p - n) v cc 450 volts supply voltage, surge (applied between p - n) v cc(surge) 500 volts collector dissipation p c 100 watts brake sector collector-emitter voltage (v d = 15v, v cin = 15v) v ces 600 volts collector current, (t c = 25 c) i c 15 amperes peak collector current, (t c = 25 c) i cp 30 amperes supply voltage (applied between p - n) v cc 450 volts supply voltage, surge (applied between p - n) v cc(surge) 500 volts collector dissipation p c 43 watts diode forward current i f 15 amperes diode dc reverse voltage v r(dc) 600 volts
sep.2000 electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units control sector over current trip level inverter part oc -20 c t 125 c, v d = 15v 65 88 amperes over current trip level brake part 18 26 amperes short circuit trip level inverter part sc -20 c t 125 c, v d = 15v 132 amperes short circuit trip level brake part 39 amperes over current delay time t off(oc) v d = 15v 10 m s over temperature protection ot trip level 100 110 120 c ot r reset level 90 c supply circuit under voltage protection uv trip level 11.5 12.0 12.5 volts uv r reset level 12.5 volts supply voltage v d applied between v up1 -v upc , 13.5 15 16.5 volts v vp1 -v vpc , v wp1 -v wpc , v n1 -v nc circuit current i d v d = 15v, v cin = 15v, v n1 -v nc 4460ma v d = 15v, v cin = 15v, v xp1 -v xpc 1318ma input on threshold voltage v th(on) applied between 1.2 1.5 1.8 volts input off threshold voltage v th(off) u p -v upc , v p -v vpc , w p -v wpc , 1.7 2.0 2.3 volts u n v n w n b r -v nc pwm input frequency f pwm 3- f sinusoidal 15 20 khz fault output current i fo(h) v d = 15v, v fo = 15v 0.01 ma i fo(l) v d = 15v, v fo = 15v 10 15 ma minimum fault output pulse width t fo v d = 15v 1.0 1.8 ms mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package
sep.2000 mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package electrical and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units igbt inverter sector collector cutoff current i ces v ce = v ces , t j = 25 c 1.0 ma v ce = v ces , t j = 125 c10ma diode forward voltage v ec -i c = 50a, v d = 15v, v cin = 15v 2.2 3.3 volts collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 50a 1.8 2.7 volts v d = 15v, v cin = 0v, i c = 50a, 1.85 2.78 volts t j = 125 c inductive load switching times t on 0.4 0.8 2.0 m s t rr v d = 15v, v cin = 0 ? 15v 0.15 0.3 m s t c(on) v cc = 300v, i c = 50a 0.4 1.0 m s t off t j = 125 c 2.0 2.9 m s t c(off) 0.5 1.0 m s brake sector collector-emitter saturation voltage v ce(sat) v d = 15v, v cin = 0v, i c = 15a, 2.6 3.5 volts t j = 25 c v d = 15v, v cin = 0v, i c = 15a, 3.0 4.0 volts t j = 125 c diode forward voltage v fm i f = 15a, v d = 15v, v cin = 5v 1.7 2.2 volts collector cutoff current i ces v ce = v ces , t j = 25 c1ma v ce = v ces , t j = 125 c10ma
sep.2000 mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package thermal characteristics characteristic symbol condition min. typ. max. units junction to case thermal resistance r th(j-c)q each inverter igbt 1.25 c/watt r th(j-c)f each inverter fwdi 3.0 c/watt rt h(c-f)q each brake igbt 2.9 c/watt r th(c-f)f each brake fwdi 5.4 c/watt contact thermal resistance r th(c-f) case to fin per module, 0.038 c/watt thermal grease applied recommended conditions for use characteristic symbol condition value units supply voltage v cc applied across p-n terminals 0 ~ 400 volts v d applied between v up1 -v upc , 15 1.5 volts v n1 -v nc , v vp1 -v vpc , v wp1 -v wpc input on voltage v cin(on) applied between 0 ~ 0.8 volts input off voltage v cin(off) u p -v upc , v p -v vpc , w p -v wpc , 4.0 ~ v d volts u n v n w n b r -v nc pwm input frequency f pwm using application circuit 5 ~ 20 khz minimum dead time t dead input signal 3 2.5 m s
sep.2000 inverter part mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package 0 1.0 2.0 3.0 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 0 20 120 40 60 100 2.5 1.5 0.5 80 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 0 1.0 2.0 3.0 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 01214161820 i c = 100a v cin = 0v t t j = 25 o c t j = 125 o c 2.5 1.5 0.5 0 1.0 0 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 2.0 40 80 120 100 60 20 0.5 1.5 13 v d = 17v 15 t j = 25 o c v cin = 0v 10 0 10 1 10 2 10 -1 collector current, i c , (amperes) switching times, t on , t off , ( m s) switching time vs. collector current (typical) t on 10 0 10 1 t off v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c 10 0 10 1 10 2 10 -2 collector current, i c , (amperes) switching times, t c(on) , t c(off) , ( m s) switching time vs. collector current (typical) 10 -1 10 0 v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c t c(on) t c(off) 10 0 10 1 10 2 10 -2 collector reverse current, -i c , (amperes) reverse recovery time, t rr , ( m s) reverse recovery current, i rr , (amperes) reverse recovery current vs. collector current (typical) 10 -1 10 0 10 0 10 1 10 2 v cc = 300v v d = 15v inductive load t j = 25 o c t j = 125 o c i rr t rr 00 0.5 1.0 10 0 00 10 1 10 2 emitter-collector voltage, v ec , (volts) collector reverse current, -i c , (amperes) 1.5 2.5 2.0 v d = 15v v cin = 15v t j = 25 o c t j = 125 o c diode forward characteristics junction temperature, t j , ( o c) 40 60 80 100 120 over current trip level vs. supply voltage (typical) supply voltage, v d , (volts) over current trip level % (normalized) 12 14 16 18 20 t j = 25 o c 60 80 100 120 140 over current trip level vs. temperature (typical) over current trip level % (normalized) -50 0 50 100 150 v d = 15v
sep.2000 inverter part mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package 60 80 100 120 140 fault output pulse width vs. temperature (typical) junction temperature, t j , ( o c) fault output pulse width % (normalized) -50 0 50 100 150 v d = 15v 0 11 12 13 14 15 control supply voltage trip-reset level temperature dependency (typical) junction temperature, t c , ( o c) uv trip-reset level, uv t , uv r , (volts) -50 150 0 50 100 0 uv uv r time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 1.25 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 3.0 o c/w 10 -2 10 -3
sep.2000 brake part mitsubishi intelligent power modules PM50RSK060 flat-base type insulated package 0 1.0 2.0 3.0 saturation voltage characteristics (typical) collector current, i c , (amperes) saturation voltage v ce(sat) , (volts) 04 20 812 16 v d = 15v v cin = 0v t j = 25 o c t j = 125 o c 0.5 2.5 1.5 0 1.0 2.0 3.0 collector-emitter saturation voltage characteristics (typical) supply voltage, v d , (volts) collector-emitter saturation voltage v ce(sat) , (volts) 01214161820 t j = 25 o c v cin = 0v i c = 6a i c = 15a 0.5 1.5 2.5 012 0 4 output characteristics (typical) collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) 3 8 12 16 4 t j = 25 o c v cin = 0v v d = 17v 13 15 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each igbt) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)q = 2.9 o c/w 10 -2 10 -3 time, (s) transient impedance, z th(j-c) , (normalized value) transient thermal impedance characteristics (each fwdi) 10 1 10 -1 10 0 10 1 10 0 10 -1 10 -2 10 -3 single pulse standard value = r th(j-c)f = 5.4 o c/w 10 -2 10 -3 0 0.4 0.8 10 0 10 1 10 2 diode forward voltage, v f , (volts) diode forward current, i f , (amperes) 1.2 2.0 1.6 v d = 15v v cin = 15v t j = 25 o c t j = 125 o c diode forward characteristics
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